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  Catalog » Semiconductors » IGBT : IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw  [Log In
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Igbt - Transistor  IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series  H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor  IGBT, 600V, 75A, 428W, TO247-3, single transistor
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Final price: 11.82 €
     
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw

Prod code: 33008

BSM10GD120DN2E3224 PDF

BSM10GD120DN2E3224

Price:  106.86 €
VAT:  25.65 €
Final price with tax:  132.51 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x3
Off state voltage max. 1.2kV
Collector current 10A
Power 80W
Max. forward impulse current 20A
Case ECONOPACK 2K
Application Inverter
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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