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  Catalog » Semiconductors » IGBT : IGBT half-bridge x2,NTC thermistor, Urmax 1.2kV, Ic 50A, P 355W  [Log In
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 250W, TO247, Eoff  1.17mJ, Eon  2.42mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price: 6.18 €
     
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Igbt - IGBT half-bridge x2,NTC thermistor, Urmax 1.2kV, Ic 50A, P 355W

Prod code: 33023

F450R12KS4B11BOSA1 PDF

F450R12KS4B11BOSA1

Price:  196.83 €
VAT:  47.24 €
Final price with tax:  244.07 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x2, NTC thermistor
Off state voltage max. 1.2kV
Collector current 50A
Power 355W
Max. forward impulse current 100A
Case AG-ECONO2-6
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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