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  Catalog » Semiconductors » IGBT : Transistor IGBT, 650V, 50A, 188W, TO247, Eoff 0.85mJ, Eon 1.92mJ  [Log In
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor  IGBT, 650V, 40A, 105W, TO247, Eoff  0.54mJ, Eon  1.17mJ
Igbt - Transistor IGBT, 650V, 40A, 105W, TO247, Eoff 0.54mJ, Eon 1.17mJ
Final price: 3.24 €
     
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Igbt - Transistor IGBT, 650V, 50A, 188W, TO247, Eoff 0.85mJ, Eon 1.92mJ

Prod code: 41502

AOK50B65H1.pdf PDF 

AOK50B65H1

Price:  4.65 €
VAT:  1.12 €
Final price with tax:  5.77 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer ALPHA & OMEGA SEMICONDUCTOR
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 50A
Power dissipation 188W
Case TO247
Gate-emitter voltage ±30V
Pulsed collector current 150A
Mounting THT
Gate charge 76nC
Kind of package tube
Turn-on time 111ns
Turn-off time 206ns
Collector-emitter saturation voltage 1.9V
Turn-off switching energy 0.85mJ
Turn-on switching energy 1.92mJ
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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