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  Catalog » Semiconductors » IGBT : IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.05kW, Ifsm 400A  [Log In
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Igbt - Transistor  IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series  H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor  IGBT, 1.2kV, 35A, 230W, TO3PN
Igbt - Transistor IGBT, 1.2kV, 35A, 230W, TO3PN
Final price: 4.84 €
     
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Igbt - IGBT half-bridge, Urmax 1.2kV, Ic 200A, P 1.05kW, Ifsm 400A

Prod code: 33025

FF200R12KE3 PDF

FF200R12KE3

Price:  126.51 €
VAT:  30.36 €
Final price with tax:  156.87 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Off state voltage max. 1.2kV
Collector current 200A
Power 1.05kW
Max. forward impulse current 400A
Case AG-62MM-1
Electrical mounting screw
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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