Specifications |
Manufacturer |
MICROSEMI |
Type of module |
IGBT |
Semiconductor structure |
transistor/transistor |
Topology |
H-bridge, NTC thermistor |
Off state voltage max. |
1.2kV |
Collector current |
75A |
Power |
500W |
Max. forward impulse current |
150A |
Case |
SP4 |
Electrical mounting |
FASTON connectors, soldered |
Mounting |
screw |
Operating temperature |
40...125°C |
Gate - emitter voltage |
±20V |
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