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  Κατάλογος » Hμιαγωγοί » IGBT : IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw  [Είσοδος
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Igbt - Transistor  IGBT, 600V, 31A, 139W, TO220AB
Igbt - Transistor IGBT, 600V, 31A, 139W, TO220AB
Τελική: 5.01 €
     
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Igbt - Transistor  IGBT, GenX4™, 650V, 110A, 880W, TO264
Igbt - Transistor IGBT, GenX4™, 650V, 110A, 880W, TO264
Τελική: 29.00 €
     
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 10A, P 80W, Ifsm 20A, screw

Κωδικός: 33008

BSM10GD120DN2E3224 PDF

BSM10GD120DN2E3224

Τιμή χωρίς ΦΠΑ:  106.86 €
Αξία ΦΠΑ:  25.65 €
Τελική με ΦΠΑ:  132.51 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x3
Off state voltage max. 1.2kV
Collector current 10A
Power 80W
Max. forward impulse current 20A
Case ECONOPACK 2K
Application Inverter
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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PSHI50/12 - H-bridge, Urmax 1.2kV, Ic 33A, P 208W, Ifsm 50A, ECO-PAC 2, screw
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