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  Catalog » Semiconductors » IGBT : IGBT half-bridge, Urmax 600V, Ic 63A, P 294W, Ifsm 150A, soldered  [Log In
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor  IGBT, 650V, 40A, 105W, TO247, Eoff  0.54mJ, Eon  1.17mJ
Igbt - Transistor IGBT, 650V, 40A, 105W, TO247, Eoff 0.54mJ, Eon 1.17mJ
Final price: 3.24 €
     
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Igbt - IGBT half-bridge, Urmax 600V, Ic 63A, P 294W, Ifsm 150A, soldered

Prod code: 33058

PSI100/06 PDF

PSI100/06

Price:  44.19 €
VAT:  10.61 €
Final price with tax:  54.79 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Off state voltage max. 600V
Collector current 63A
Power 294W
Max. forward impulse current 150A
Case ECO-PAC 2
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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