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IGBT
: IGBT half-bridge, Urmax 600V, Ic 63A, P 294W, Ifsm 150A, soldered
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Igbt - Transistor IGBT, 1200V, 41A, 160W, TO247-3
Final price:
5.60 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.3mJ, Eon 2.6mJ
Final price:
6.20 €
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Igbt - IGBT half-bridge, Urmax 600V, Ic 63A, P 294W, Ifsm 150A, soldered
Prod code:
33058
PDF
PSI100/06
Click to enlarge
Price:
44.19 €
VAT:
10.61 €
Final price with tax:
54.79 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
POWERSEM
Type of module
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Off state voltage max.
600V
Collector current
63A
Power
294W
Max. forward impulse current
150A
Case
ECO-PAC 2
Electrical mounting
soldered
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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