|
Specifications |
| Manufacturer |
INFINEON TECHNOLOGIES |
| Type of transistor |
IGBT |
| Collector-emitter voltage |
1.2kV |
| Collector current |
57A |
| Power dissipation |
390W |
| Case |
TO247-3 |
| Gate-emitter voltage |
±30V |
| Pulsed collector current |
160A |
| Mounting |
THT |
| Gate charge |
320nC |
| Kind of package |
tube |
| Semiconductor structure |
single transistor |
| Features of semiconductor devices |
integrated anti-parallel diode |
| Gross weight |
5.923 g |
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Relays
Semiconductors
DC-DC Converters
Chemical sprays
