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IGBT
: Single transistor, Urmax 600V, Ic 200A, P 830W, Ifsm 1.2kA, screw
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price:
40.05 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price:
6.18 €
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Igbt - Single transistor, Urmax 600V, Ic 200A, P 830W, Ifsm 1.2kA, screw
Prod code:
33045
PDF
IXGN200N60B3
Click to enlarge
Price:
43.72 €
VAT:
10.49 €
Final price with tax:
54.21 €
Amount:
Usually shipped within 2-3 business days.
Usually shipped within 2-3 business days.
Specifications
Manufacturer
IXYS
Type of module
IGBT
Semiconductor structure
single transistor
Topology
single transistor
Off state voltage max.
600V
Collector current
200A
Power
830W
Max. forward impulse current
1.2kA
Case
SOT227B
Electrical mounting
screw
Mounting
screw
Operating temperature
55...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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