Specifications |
Manufacturer |
ON SEMICONDUCTOR |
Type of transistor |
IGBT |
Collector-emitter voltage |
650V |
Collector current |
50A |
Power dissipation |
134W |
Case |
TO247-3 |
Gate-emitter voltage |
±20V |
Pulsed collector current |
200A |
Mounting |
THT |
Gate charge |
99nC |
Kind of package |
tube |
Gross weight |
5.03 g |
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