Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
P-MOSFET x2 |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
55V |
Drain current |
3.4A |
Power |
2W |
Case |
SO8 |
Gate-source voltage |
20V |
On-state resistance |
105mŮ |
Junction-to-ambient thermal resistance |
62.5K/W |
Mounting |
SMD |
Gate charge |
26nC |
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