... ... ...
...
ACDCshop logo
Set of tools for repairing soldered connections
GreekSeperatorEnglishSeperator
New products Navigation Company My Account My cart Contact
Search:    
  Catalog » Semiconductors » Transistor / Fet » FET : Transistor P-MOSFET, unipolar, -60V, -18.7A, 81.1W, PG-TO220-3-1  [Log In
Background
...
  arrow Categories  
     
  arrow Best viewed  
FET - Transistor N-MOSFET 30V 260A 290W TO220AB
FET - Transistor N-MOSFET 30V 260A 290W TO220AB
Final price: 4.63 €
     
  arrow What's New? more  
Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 8A, Idm  52A, 48W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 8A, Idm 52A, 48W, TO220FP
Final price: 4.32 €
     
  arrow Payment  
Visa Mastercard 
Verified visa Secure Code 
Paypal 
     
  arrow Information  
  Our company
  Payment options
  Shipping & Returns
  Buying options
  Freq Asked Questions
  Privacy Notice
  Conditions of Use
  Contact Us
     
Seperator
Seperator

Transistor P-FET - Transistor P-MOSFET, unipolar, -60V, -18.7A, 81.1W, PG-TO220-3-1

Prod code: 30239

SPP18P06PHXKSA1 PDF

SPP18P06PHXKSA1

Click to enlarge
Transistor  P-MOSFET, unipolar, -60V, -18.7A, 81.1W, PG-TO220-3-1
Price:  2.01 €
VAT:  0.48 €
Final price with tax:  2.49 €
Amount:   
Usually shipped within 1 business day.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Transistor type P-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 18.7A
Power 81.1W
Case PG-TO220-3-1
Gate-source voltage ±20V
On-state resistance 130mΩ
Mounting THT
Technology SIPMOS™
 
Availability: On stock
Seperator Back Reviews Seperator
Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
left left Other products right
2N3771 - Transistor NPN 50V 30A 150W AFPOSW. TO3
2N3771 - Transistor NPN 50V 30A 150W AFPOSW. TO3

BC556A-DIO - Transistor PNP, bipolar, 65V, 100mA, 500mW, TO92
BC556A-DIO - Transistor PNP, bipolar, 65V, 100mA, 500mW, TO92

IRFR5410TRPBF - Transistor  P-MOSFET, unipolar, HEXFET, -100V, -13A, 66W, DPAK
IRFR5410TRPBF - Transistor P-MOSFET, unipolar, HEXFET, -100V, -13A, 66W, DPAK

BCR583E6327 - Transistor  PNP, bipolar, 50V, 500mA, 330mW, SOT23
BCR583E6327 - Transistor PNP, bipolar, 50V, 500mA, 330mW, SOT23

ZXTN2011G - Transistor  NPN, bipolar, 100V, 6A, 3W, SOT223
ZXTN2011G - Transistor NPN, bipolar, 100V, 6A, 3W, SOT223

TIP115 - Transistor  PNP, bipolar, Darlington + diode, 60V, 2A, 50W, TO220
TIP115 - Transistor PNP, bipolar, Darlington + diode, 60V, 2A, 50W, TO220

FDS8958A - Transistor  N/P-MOSFET, unipolar, 30/30V, 7/-5A, 1.6W, SO8
FDS8958A - Transistor N/P-MOSFET, unipolar, 30/30V, 7/-5A, 1.6W, SO8

BSS7728NH6327XTSA2 - Transistor  N-MOSFET, unipolar, 60V, 200mA, 360mW, SOT23, SIPMOS™
BSS7728NH6327XTSA2 - Transistor N-MOSFET, unipolar, 60V, 200mA, 360mW, SOT23, SIPMOS™

IXTK82N25P - Transistor  N-MOSFET, unipolar, 250V, 82A, 500W, TO264
IXTK82N25P - Transistor N-MOSFET, unipolar, 250V, 82A, 500W, TO264

IXTP75N10P - Transistor  N-MOSFET, unipolar, 100V, 75A, 360W, TO220
IXTP75N10P - Transistor N-MOSFET, unipolar, 100V, 75A, 360W, TO220

SPP20N60C3 - Transistor  N-MOSFET, unipolar, 650V, 20.7A, 208W, TO220, CoolMOS™
SPP20N60C3 - Transistor N-MOSFET, unipolar, 650V, 20.7A, 208W, TO220, CoolMOS™

BD13510STU - Transistor  NPN, bipolar, 45V, 1.5A, 12.5W, TO126
BD13510STU - Transistor NPN, bipolar, 45V, 1.5A, 12.5W, TO126

BS170FTA - Transistor  N-MOSFET, unipolar, 60V, 0.00015A, 0.33W, SOT23
BS170FTA - Transistor N-MOSFET, unipolar, 60V, 0.00015A, 0.33W, SOT23

IXTN660N04T4 - Module, single transistor, 40V, 660A, SOT227B, Ugs  ±15V, screw
IXTN660N04T4 - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw

IRLR8726TRPBF - Transistor  N-MOSFET, unipolar, 30V, 61A, Idm  340A, 75W, DPAK
IRLR8726TRPBF - Transistor N-MOSFET, unipolar, 30V, 61A, Idm 340A, 75W, DPAK

Seperator
Parsed: 0.010 s
Background
Rounded corner: bottom-left Background Rounded corner: bottom-right