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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 600V, 14A, 170W, TO247  [Log In] 
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 600V, 1.51A, 45W, TO220-3
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 600V, 1.51A, 45W, TO220-3
Final price: 0.97 €
     
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FET - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw
FET - Module, single transistor, 40V, 660A, SOT227B, Ugs ±15V, screw
Final price: 36.77 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 600V, 14A, 170W, TO247

Prod code: 30182
STW28N60M2 PDF

STW28N60M2
Price:  3.90 €
VAT:  0.94 €
Final price with tax:  4.84 €
Amount:   
Usually shipped within 1 business day.
Specifications
Manufacturer ST MICROELECTRONICS
Transistor type N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 14A
Power 170W
Case TO247
Gate-source voltage ±25V
On-state resistance 135mΩ
Mounting THT
Quantity in package 30pcs.
Package type tube
 
Availability: On stock
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Manufacturers: --- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
left left Relative products right
AOS218/247 - Thermally conductive pad ceramic TO218 TO247 L 21mm W 25mm
AOS218/247 - Thermally conductive pad ceramic TO218 TO247 L 21mm W 25mm

 AOS247 - Thermally conductive pad ceramic TO247 L 20mm W 23mm D 1mm
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 THF - Retaining spring TO220 TO247 TO248 TO3P stainless steel
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 WSC-247 - Insulator cover, TO247, 0.4K/W, L 30mm, W 13.5mm, 1.22W/mK, 10kV
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 WS/247 - Heat transfer pad silicone, TO247, 0.4K/W, L 21mm, W 17mm, 10kV
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 WK/247 - Heat transfer pad silicone, TO247, 0.45K/W, L 21mm, W 17mm, 6.5kV
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