Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
55V |
Drain current |
110A |
Power dissipation |
310W |
Case |
TO247AC |
Gate-source voltage |
±20V |
On-state resistance |
5.3mΩ |
Mounting |
THT |
Gate charge |
180nC |
Kind of package |
tube |
Kind of channel |
enhanced |
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