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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 200V, 0.53A, Idm 2.6A, 1.8W, SOT223  [Είσοδος
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Transistor N-MOSFET - Transistor  N-MOSFET, unipolar, 150V, 62A, 350W, TO220
Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 150V, 62A, 350W, TO220
Τελική: 5.34 €
     
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Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -3.9A, Idm  -32A, 1.2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8
Τελική: 1.00 €
     
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Transistor N-FET - Transistor N-MOSFET, unipolar, 200V, 0.53A, Idm 2.6A, 1.8W, SOT223

Κωδικός: 39792

BSP149H6327XTSA1 PDF

BSP149H6327XTSA1

Τιμή χωρίς ΦΠΑ:  1.82 €
Αξία ΦΠΑ:  0.44 €
Τελική με ΦΠΑ:  2.26 €
Ποσότητα:   
* Αποστολή σε 2-3 εργάσιμες ημέρες.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology SIPMOS™
Polarisation unipolar
Drain-source voltage 200V
Drain current 0.53A
Pulsed drain current 2.6A
Power dissipation 1.8W
Case SOT223
Gate-source voltage ±20V
On-state resistance 3.5Ω
Mounting SMD
Kind of channel depleted
Gross weight 0.147 g
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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