Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Technology |
HiPerFET™,   X3-Class |
Polarisation |
unipolar |
Drain-source voltage |
300V |
Drain current |
38A |
Power dissipation |
240W |
Case |
TO220AB |
Gate-source voltage |
±20V |
On-state resistance |
50mΩ |
Mounting |
THT |
Gate charge |
35nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Reverse recovery time |
90ns |
Gross weight |
2.1 g |
|
|