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  Κατάλογος : Optocoupler single channel Out transistor CTR@If 20%@1mA 35V  [Είσοδος] 
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Αποστάτης πλαστικός - PCB distance, polyamide, Spacer leng 25.4mm, latch/latch
Αποστάτης πλαστικός - PCB distance, polyamide, Spacer leng 25.4mm, latch/latch
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Ψυγεία IC - Heatsink extruded, grilled, natural, L 200mm, W 250mm, H 50mm
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Οπτοσυζεύκτες - Optocoupler single channel Out transistor CTR@If 20%@1mA 35V

Κωδικός: 11508
PDF

PC814X
Type optocoupler
Kind of optocoupler single channel
Symbol Output type Case CTR@If Turn-on t. Turn-off t. Insulation voltage Uce Diagram Conform to the norm Description
[µs] [µs] [kV] [V]
4N25 transistor DIL6 50%@10mA 2 2 5.3 70 Fig. 1. - -
4N25-E transistor DIP6 20%@10mA 3 3 5 80 Fig. 2. - -
4N26 transistor DIL6 50%@10mA 2 2 5.3 70 Fig. 1. - -
4N27 transistor DIL6 30%@10mA 2 2 5.3 70 Fig. 1. - -
4N28 transistor DIL6 30%@10mA 2 2 5.3 70 Fig. 1. - -
4N32 transistor DIL6 500%@10mA 5 100 5.3 30 Fig. 3. - -
4N33 Darlington DIP6 500%@10mA 2.5 30 Fig. 3. - -
4N35 transistor DIL6 100%@100mA 10 10 5.3 30 Fig. 1. - -
4N35/LITEON transistor DIP6 20%@10mA 3 3 2 30 - - -
4N36 transistor DIP6 100%@10mA 10 10 5.3 30 Fig. 1. - -
4N37 transistor DIL6 100%@10mA 10 10 5.3 30 Fig. 1. - -
4N38 transistor DIL6 100%@10mA 5 4 2.5 80 Fig. 1. - -
CNX83A transistor DIP6 40%@10mA 3 3 5.3 50 Fig. 4. VDE -
CNY17-1 transistor DIL6 40-80%@10mA 10 10 5.3 70 Fig. 5. - -
CNY17-1/VIS transistor DIL6 40-80%@10mA 3 18 5.3 70 Fig. 6. - -
CNY17-2 transistor DIL6 6.3-12.5%@10mA 10 10 5.3 70 Fig. 5. - -
CNY17-2/VIS transistor DIL6 6.3-12.5%@10mA 4.2 23 5.3 70 Fig. 6. - -
CNY17-3 transistor DIL6 100-200%@10mA 10 10 5.3 70 Fig. 5. - -
CNY17-3/VIS transistor DIL6 100-200%@10mA 4.2 23 5.3 70 Fig. 6. - -
CNY17-3X007 transistor DIL6 SMD 100-200%@10mA 4.2 23 5.3 70 Fig. 6. - -
CNY17-4 transistor DIL6 16-32%@10mA 10 10 5.3 70 Fig. 5. - -
CNY17-4/VIS transistor DIL6 16-32%@10mA 6 25 5.3 70 Fig. 6. - -
CNY17F-1 transistor DIP6 40-80%@10mA 3 18 5.3 70 Fig. 7. - -
CNY17F-2 transistor DIP6 6.3-12.5%@10mA 4.2 23 5.3 70 Fig. 7. - -
CNY17F-2X016 transistor DIL6 10,16 6.3-12.5%@10mA 4.2 23 5.3 70 Fig. 7. VDE -
CNY17F-3 transistor DIL6 100-200%@10mA 4.2 23 5.3 70 Fig. 7. - -
CNY17F-3X016 transistor DIL6 10,16 100-200%@10mA 4.2 23 5.3 70 Fig. 7. VDE -
CNY17F-4 transistor DIL6 16-32%@10mA 6 25 5.3 70 Fig. 7. - -
CNY17G-3 transistor DIL6 10,16 100-200%@10mA 4.2 23 5.3 70 Fig. 6. - -
CNY17G-4 transistor DIL6 10,16 16-32%@10mA 4.2 25 5.3 70 Fig. 6. - -
CNY64 transistor PIN4 10,16 50-300%@10mA 5 5 8.3 32 Fig. 8. - -
CNY65 transistor PIN4 15,24 50-300%@10mA 5 5 8 32 Fig. 8. - -
CNY65A transistor PIN4 15,24 6.3-12.5%@10mA 5 5 8.3 32 Fig. 8. - -
CNY65B transistor PIN4 15,24 100-200%@10mA 5 5 8 32 Fig. 8. - -
CNY65EXI transistor PIN4 15,24 50-300%@10mA 5 5 11.6 32 Fig. 8. - -
CNY66 transistor PIN4 15,24 50-300%@10mA 5 5 8.3 32 Fig. 8. - -
CNY75A transistor DIL6 6.3-12.5%@10mA 4.5 3 6 90 Fig. 9. - -
CNY75B transistor DIL6 100-200%@10mA 5.5 4 6 90 Fig. 9. - -
CNY75C transistor DIL6 16-32%@10mA 7 5 6 90 Fig. 9. - -
CNY75GA transistor DIL6 10,16 6.3-12.5%@10mA 4.5 3 6 90 Fig. 9. - -
CNY75GB transistor DIL6 10,16 100-200%@10mA 5.5 4 6 90 Fig. 9. - -
CNY75GC transistor DIL6 10,16 16-32%@10mA 7 5 6 90 Fig. 9. - -
CQY80N transistor DIL6 90%@10mA 9 9 4 32 Fig. 10. - -
EL817 - DIP4 50-600%@5mA 4 3 5 35 - - -
H11A1 transistor DIL6 50%@10mA 10 10 5.3 30 Fig. 10. - -
H11AA1 transistor DIL6 20%@10mA 5.3 30 Fig. 11. - AC in.
H11D1 transistor DIP6 20%@10mA 5 5 5.3 300 Fig. 10. - -
H11D1/VIS transistor DIP6 20%@10mA 5 6 5.3 300 Fig. 10. - -
H11F1M FET transistor DIP4 - 25 25 7 - - - -
H11G1 Darlington DIP6 1000%@10mA 5 100 2.5 100 Fig. 12. - -
HCNW4562-300E transistor SO8 160%@5mA - - - - - - -
HCPL-0501-000E transistor DIP8 25%@16mA 1.5 0.8 3.75 - - - -
HCPL0601 transistor SO8 - - - - - - - -
HCPL-070L-000E transistor SO8 400-5000%@0.5mA 30 90 3.75 - - - -
HCPL-181-06DE transistor MFP4 50-600%@5mA 4 3 3.75 - - - -
HCPL-817-30DE transistor MFP4 50-600%@5mA 4 3 5 - - - -
IL205AT transistor SOIC8 80%@10mA 3 3 3 70 Fig. 13. - -
IL206AT transistor SOIC8 12.5%@10mA 3 3 3 70 Fig. 13. - -
IL207AT transistor SOIC8 200%@10mA 3 3 3 70 Fig. 13. - -
IL217AT transistor SOIC8 13%@1mA 3 3 3 70 Fig. 13. - -
IL250 transistor DIP6 50%@10mA 5.3 30 Fig. 11. - AC in.
IL252 transistor DIP6 100%@10mA - - - 30 - - -
IL55 Darlington DIL6 400%@10mA 5.3 30 Fig. 3. - -
IL66B-2 Darlington DIL6 1000%@2mA 200 200 5.3 60 Fig. 14. - -
K817P transistor DIP4 50-600%@5mA 6 5 5 70 Fig. 15. - -
KB817-B transistor MFP4 50-600%@5mA 4 3 5 35 - - -
KB817C transistor DIP4 50-600%@5mA 4 3 5 - - - -
LCA710 FET transistor DIP6 - 2500 250 3.75 - - - -
LTV352T transistor MFP4 1000%@1mA 100 20 3.75 300 - - -
LTV354T transistor MFP4 600%@1mA 3.75 35 Fig. 16. - AC in.
LTV355T Darlington MFP4 50%@1mA 3.75 35 Fig. 17. - -
LTV356T transistor MFP4 50%@5mA 3.75 80 Fig. 15. - -
LTV357T transistor MFP4 50%@5mA 3.75 35 Fig. 15. - -
LTV358T-SMD transistor MFP4 50%@5mA 3.75 120 Fig. 15. - -
LTV814 transistor DIL4 20%@1mA 5 35 Fig. 16. - AC in.
LTV814S transistor DIP4 20-300%@1mA 4 3 5 35 - - -
LTV815 Darlington DIL4 600%@1mA 5 35 Fig. 17. - -
LTV816 transistor DIL4 50%@5mA 5 80 Fig. 15. - -
LTV817 transistor DIL4 50%@5mA 5 35 Fig. 15. - -
LTV817S-SMD transistor SO4 50%@5mA - - 5 35 - - -
MCT2 transistor DIL6 20%@10mA 0.3 0.3 5.3 30 Fig. 10. - -
PC123 transistor DIP4 - 4 3 5 - - - -
PC123FY2 transistor DIL4 10,16 50%@5mA 5 70 Fig. 15. - -
PC355Z Darlington MFP 50-600%@5mA 3.75 35 Fig. 17. - -
PC357N14 transistor MFP 50-600%@5mA 3.75 35 Fig. 15. - -
PC357N1J000F transistor MFP4 50-600%@5mA 4 3 3.75 80 - - -
PC357N2TJ00F transistor MFP4 50-600%@5mA 4 3 3.75 80 - - -
PC357N4T transistor MFP4 50-600%@5mA 4 3 3.75 - - -
PC357Z transistor MFP 50-600%@5mA 3.75 35 Fig. 15. - -
PC814 transistor DIL4 20%@1mA 5 35 Fig. 16. - AC in.
PC814X transistor DIL4 20%@1mA 5 35 Fig. 16. - AC in.
PC815XPJ000F Darlington DIP4 600%@1mA 60 53 5 35 - - -
PC817 transistor DIL4 50-600%@5mA 5 35 Fig. 15. - -
PC817C transistor DIL4 50-600%@5mA 4 3 5 35 - - -
PC817X transistor DIP4 50%@5mA 4 3 5 - - - -
PS2701A-1-F3-A transistor SO4 50-300%@5mA 5 7 3.75 70 - - -
SFH600-1 transistor DIL6 6.3-12.5%@10mA 3.7 19 5.3 70 Fig. 18. - -
SFH600-2 transistor DIL6 100-200%@10mA 4.5 21 5.3 70 Fig. 18. - -
SFH600-3 transistor DIL6 16-32%@10mA 4.5 21 5.3 70 Fig. 18. - -
SFH601-1X006 transistor DIL6 10,16 40-80%@10mA 3 18 5.3 100 Fig. 18. - -
SFH601-2X007 transistor DIL6 SMD 6.3-12.5%@10mA 4.2 23 5.3 100 Fig. 18. - -
SFH601-3 transistor DIL6 100-200%@10mA 4.2 2.3 5.3 100 Fig. 18. - -
SFH601-4 transistor DIL6 16-32%@10mA 6 25 5.3 100 Fig. 18. - -
SFH608-5 transistor DIL6 25-500%@1mA 8 7.5 5.3 55 Fig. 18. - -
SFH610A-1 transistor DIP4 40-80%@10mA 3 1.8 5.3 70 Fig. 19. - -
SFH610A-2 transistor DIP4 6.3-12.5%@10mA 4.2 2.3 5.3 70 Fig. 19. - -
SFH610A-3 transistor DIP4 100-200%@10mA 4.2 2.3 5.3 70 Fig. 19. - -
SFH610A-4 transistor DIP4 16-32%@10mA 6 2.5 5.3 70 Fig. 19. - -
SFH6136 transistor DIP8 35%@16mA 0.2 0.3 5.3 - - - -
SFH615A-1 transistor DIP4 40-80%@10mA 3 1.8 5.3 70 Fig. 19. - -
SFH615A-2 transistor DIP4 6.3-12.5%@10mA 4.2 2.3 5.3 70 Fig. 19. - -
SFH615A-3 transistor DIP4 100-200%@10mA 4.2 2.3 5.3 70 Fig. 19. - -
SFH615A-4 transistor DIP4 16-32%@10mA 6 2.5 5.3 70 Fig. 19. - -
SFH617A-2 transistor DIP4 6.3-12.5%@10mA 4.2 1.8 5.3 70 Fig. 19. - -
SFH617A-2X006 transistor DIP4 10,16 6.3-12.5%@10mA 4.2 2.3 5.3 70 Fig. 19. - -
SFH617A-2X016 transistor DIP4 10,16 6.3-12.5%@10mA 4.2 2.3 5.3 70 Fig. 19. VDE -
SFH617A-3 transistor DIP4 100-200%@10mA 4.2 2.3 5.3 70 Fig. 19. - -
SFH617A-3X016 transistor DIP4 10,16 100-200%@10mA 4.2 2.3 5.3 70 Fig. 19. VDE -
SFH617A-4X016 transistor DIP4 10,16 16-32%@10mA 6 2.5 5.3 70 Fig. 19. VDE -
SFH6186-2T transistor SO4 63-125%@1mA 6 5.5 5.3 55 - - -
SFH6186-3T transistor SO4 100-200%@1mA 6 5.5 5.3 55 - - -
SFH6186-4T transistor SO4 160-320%@1mA 6 5.5 5.3 55 - - -
SFH6186-5T transistor SO4 250-500%@1mA 6 5.5 5.3 55 - - -
SFH618A-3 transistor DIP4 100-200%@1mA 6 5.5 5.3 55 Fig. 19. - -
SFH618A-3X016 transistor DIP4 10,16 100-200%@1mA 6 5.5 5.3 55 Fig. 19. VDE -
SFH618A-4 transistor DIP4 16-32%@1mA 6 5.5 5.3 55 Fig. 19. - -
SFH618A-4X001 transistor DIP4 16-32%@1mA 6 5.5 5.3 55 Fig. 19. VDE -
SFH618A-5 transistor DIP4 250-500%@1mA 6 5.5 5.3 55 Fig. 19. - -
SFH620A-1 transistor DIL4 30%@1mA 3 2.3 5.3 70 Fig. 16. - AC in.
SFH620A-3 transistor DIL4 4.5%@1mA 3 2.3 5.3 70 Fig. 16. - AC in.
SFH628A-2X016 transistor DIL4 10,16 6.3-200%@1mA 6 5.5 5.3 55 Fig. 16. VDE AC in.
SFH628A-3 transistor DIP4 100-300%@1mA 3.5 5 5.3 - - - -
SFH628A-4X016 transistor DIL4 10,16 16-500%@1mA 6 5.5 5.3 55 Fig. 16. VDE AC in.
TCDT1100G transistor DIP6 10,16 40%@10mA 11 7 3.75 32 Fig. 20. - -
TCDT1101G transistor DIL6 10,16 40-80%@10mA 9 9 4 32 Fig. 10. - -
TCDT1102 transistor DIP6 40-80%@10mA 11 7 3.75 32 Fig. 20. - -
TCDT1102G transistor DIP6 10,16 40-80%@10mA 11 7 3.75 32 Fig. 20. - -
TCDT1124G transistor DIP6 10,16 16-32%@10mA 6 4 3.75 90 Fig. 20. - -
TCET1107 transistor DIP4 80-16%@5mA 6 10 5 70 Fig. 15. - -
TCET1109G transistor DIP4 200-400%@5mA 6 10 5 70 Fig. 15. - -
TIL111 transistor DIP6 100-300%@10mA 5 1 5.3 30 - - -
TLP112A transistor MFP4 20%@16mA 0.8 0.8 2.5 15 - - -
TLP126 transistor MFP4 100-1200%@1mA 10 8 3.75 80 - - -
TLP127-SMD Darlington MFP 1000%@1mA 2.5 300 Fig. 21. - -
TLP181 transistor MFP 50-600%@5mA 3.75 35 Fig. 15. - -
TLP-181 - MFP4 50-600%@5mA 3 3 3.75 - - - -
TLP626 transistor DIL4 100-1200%@1mA 5 55 Fig. 16. - AC in.
TLP627 Darlington DIL4 1000%@1mA 5 300 Fig. 21. - -
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