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  Catalog » Semiconductors » IGBT : Module IGBT, 123A, SEMITRANS2, 1.2kV, Ifsm 300A, screwed  [Log In
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 250W, TO247, Eoff  1.17mJ, Eon  2.42mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price: 6.18 €
     
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Igbt - Module IGBT, 123A, SEMITRANS2, 1.2kV, Ifsm 300A, screwed

Prod code: 26556

SKM100GB12T4 PDF

SKM100GB12T4

Price:  68.80 €
VAT:  16.51 €
Final price with tax:  85.31 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer SEMIKRON
Module type IGBT
Collector current 123A
Case SEMITRANS2
Mounting screwed
Operating temperature 40...125°C
Gate - emitter voltage 20V
Off state voltage max. 1.2kV
Max. forward impulse current 300A
Electrical mounting screwed
Topology IGBT half-bridge
Semiconductor structure transistor/transistor
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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