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  Κατάλογος » Hμιαγωγοί » IGBT : IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A  [Είσοδος
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Igbt - Transistor  IGBT, bipolar, 650V, 42A, 125W, PG-TO220-3, Series  F5
Igbt - Transistor IGBT, bipolar, 650V, 42A, 125W, PG-TO220-3, Series F5
Τελική: 3.70 €
     
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Igbt - Transistor  IGBT, 650V, 40A, 283W, TO3P
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Τελική: 4.32 €
     
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Igbt - IGBT half-bridge x3, Urmax 1.2kV, Ic 50A, P 350W, Ifsm 100A

Κωδικός: 33015

BSM50GD120DN2 PDF

BSM50GD120DN2

Τιμή χωρίς ΦΠΑ:  258.25 €
Αξία ΦΠΑ:  61.98 €
Τελική με ΦΠΑ:  320.22 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge x3
Off state voltage max. 1.2kV
Collector current 50A
Power 350W
Max. forward impulse current 100A
Case ECONOPACK 2K
Application Inverter
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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