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  Catalog » Semiconductors » IGBT : Transistor IGBT, 600V, 49A, 230W, TO3PN  [Log In] 
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price: 6.18 €
     
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Igbt - Transistor IGBT, 600V, 49A, 230W, TO3PN

Prod code: 39552
GT50JR21 PDF

GT50JR21
Price:  5.17 €
VAT:  1.24 €
Final price with tax:  6.41 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 600V
Collector current 49A
Power dissipation 230W
Case TO3PN
Gate-emitter voltage ±25V
Pulsed collector current 100A
Mounting THT
Kind of package tube
Turn-on time 430ns
Turn-off time 720ns
Gross weight 4.853 g
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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