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  Catalog » Semiconductors » IGBT : IGBT half-bridge, Urmax 1.7kV, Ic 198A, Ifsm 950A, SEMITRANS2  [Log In] 
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Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Igbt - Transistor IGBT, 600V, 75A, 428W, TO247-3, single transistor
Final price: 11.82 €
     
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Igbt - IGBT half-bridge, Urmax 1.7kV, Ic 198A, Ifsm 950A, SEMITRANS2

Prod code: 30617
SKM150GB17E4 PDF

SKM150GB17E4
Price:  128.04 €
VAT:  30.73 €
Final price with tax:  158.77 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer SEMIKRON
Module type IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge
Off state voltage max. 1.7kV
Collector current 198A
Max. forward impulse current 950A
Case SEMITRANS2
Electrical mounting screw
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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