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: IGBT half-bridge, Urmax 1.7kV, Ic 198A, Ifsm 950A, SEMITRANS2
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price:
40.05 €
What's New?
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price:
6.18 €
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Igbt - IGBT half-bridge, Urmax 1.7kV, Ic 198A, Ifsm 950A, SEMITRANS2
Prod code:
30617
PDF
SKM150GB17E4
Click to enlarge
Price:
128.04 €
VAT:
30.73 €
Final price with tax:
158.77 €
Amount:
Long delivery time
Long delivery time
Specifications
Manufacturer
SEMIKRON
Module type
IGBT
Semiconductor structure
transistor/transistor
Topology
IGBT half-bridge
Off state voltage max.
1.7kV
Collector current
198A
Max. forward impulse current
950A
Case
SEMITRANS2
Electrical mounting
screw
Mounting
screw
Operating temperature
40...150°C
Gate - emitter voltage
±20V
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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