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  Catalog » Semiconductors » IGBT : IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW  [Log In
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor  IGBT, 650V, 60A, 250W, TO247, Eoff  1.17mJ, Eon  2.42mJ
Igbt - Transistor IGBT, 650V, 60A, 250W, TO247, Eoff 1.17mJ, Eon 2.42mJ
Final price: 6.18 €
     
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Igbt - IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW

Prod code: 33035

FF900R12IE4 PDF

FF900R12IE4

Price:  840.84 €
VAT:  201.80 €
Final price with tax:  1,042.64 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge, NTC thermistor
Off state voltage max. 1.2kV
Collector current 900A
Power 5.1kW
Max. forward impulse current 1.8kA
Case AG-PRIME2-1
Electrical mounting screw
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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