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  Catalog » Semiconductors » IGBT : IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW  [Log In
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Igbt - Transistor  IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series  H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor  IGBT, 1.2kV, 35A, 230W, TO3PN
Igbt - Transistor IGBT, 1.2kV, 35A, 230W, TO3PN
Final price: 4.84 €
     
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Igbt - IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW

Prod code: 33035

FF900R12IE4 PDF

FF900R12IE4

Price:  840.84 €
VAT:  201.80 €
Final price with tax:  1,042.64 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge, NTC thermistor
Off state voltage max. 1.2kV
Collector current 900A
Power 5.1kW
Max. forward impulse current 1.8kA
Case AG-PRIME2-1
Electrical mounting screw
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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