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  Catalog » Semiconductors » IGBT : Transistor IGBT, 1.2kV, 35A, 230W, TO3PN  [Log In] 
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw
Final price: 40.05 €
     
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Igbt - Transistor IGBT, 650V, 40A, 105W, TO247, Eoff 0.54mJ, Eon 1.17mJ
Igbt - Transistor IGBT, 650V, 40A, 105W, TO247, Eoff 0.54mJ, Eon 1.17mJ
Final price: 3.24 €
     
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Igbt - Transistor IGBT, 1.2kV, 35A, 230W, TO3PN

Prod code: 40407
GT40QR21.pdf PDF 

GT40QR21
Price:  4.20 €
VAT:  1.01 €
Final price with tax:  5.20 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer TOSHIBA
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 35A
Power dissipation 230W
Case TO3PN
Gate-emitter voltage ±25V
Pulsed collector current 80A
Mounting THT
Kind of package tube
Turn-on time 0.3µs
Turn-off time 0.6µs
Features of semiconductor devices integrated anti-parallel diode
 
Availability: With order
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Manufacturers: --- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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