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  Κατάλογος » Hμιαγωγοί » IGBT : IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW  [Είσοδος
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Igbt - Transistor  IGBT, 650V, 60A, 375W, TO3P
Igbt - Transistor IGBT, 650V, 60A, 375W, TO3P
Τελική: 5.94 €
     
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Igbt - Transistor  IGBT, 600V, 20A, 166W, TO220-3, single transistor
Igbt - Transistor IGBT, 600V, 20A, 166W, TO220-3, single transistor
Τελική: 4.98 €
     
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Igbt - IGBT half-bridge, NTC thermistor, Urmax 1.2kV, Ic 900A, P 5.1kW

Κωδικός: 33035

FF900R12IE4 PDF

FF900R12IE4

Τιμή χωρίς ΦΠΑ:  840.84 €
Αξία ΦΠΑ:  201.80 €
Τελική με ΦΠΑ:  1,042.64 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure transistor/transistor
Topology IGBT half-bridge, NTC thermistor
Off state voltage max. 1.2kV
Collector current 900A
Power 5.1kW
Max. forward impulse current 1.8kA
Case AG-PRIME2-1
Electrical mounting screw
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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