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Transistor  IGBT, 650V, 100A, 268W, TO247-4
Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price: 8.53 €
     
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Igbt - Transistor  IGBT, 650V, 40A, 283W, TO3P
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Final price: 4.32 €
     
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Igbt - IGBT 3-phase bridge,3-phase diode bridge, NTC thermistor, PIM

Prod code: 33016

BSM50GP120 PDF

BSM50GP120

Price:  246.52 €
VAT:  59.16 €
Final price with tax:  305.68 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of module IGBT
Semiconductor structure diode/transistor
Topology IGBT 3-phase bridge, 3-phase diode bridge, NTC thermistor, brake chopper
Off state voltage max. 1.6kV
Collector current 50A
Power 360W
Max. forward impulse current 400A
Case PIM
Application Inverter, frequency changer
Electrical mounting soldered
Mounting screw
Operating temperature 40...125°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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