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IGBT
: Transistor IGBT, SiC SBD, 650V, 50A, 357W, TO247-3
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Transistor IGBT, 650V, 100A, 268W, TO247-4
Final price:
8.53 €
What's New?
Igbt - Transistor IGBT, 650V, 40A, 283W, TO3P
Final price:
4.32 €
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Igbt - Transistor IGBT, SiC SBD, 650V, 50A, 357W, TO247-3
Prod code:
41448
PDF
BGH50N65HF1
Click to enlarge
Price:
11.10 €
VAT:
2.66 €
Final price with tax:
13.76 €
Amount:
Usually shipped within 2-3 business days.
Usually shipped within 2-3 business days.
Specifications
Manufacturer
BASiC SEMICONDUCTOR
Type of transistor
IGBT
Technology
Field Stop,
Collector-emitter voltage
650V
Collector current
50A
Power dissipation
357W
Case
TO247-3
Gate-emitter voltage
±20V
Pulsed collector current
200A
Mounting
THT
Gate charge
308nC
Kind of package
tube
Turn-on time
54ns
Turn-off time
256ns
Features of semiconductor devices
integrated anti-parallel diode
Availability:
With order
Manufacturers
:
---
|
FAIRCHILD SEMICONDUCTOR
|
INFINEON TECHNOLOGIES
|
INTERNATIONAL RECTIFIER
|
IXYS
|
ON SEMICONDUCTOR
|
SEMIKRON
|
ST MICROELECTRONICS
|
TOSHIBA
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