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  Κατάλογος » Hμιαγωγοί » IGBT : H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw  [Είσοδος
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Igbt - Transistor  IGBT, 600V, 31A, 139W, TO220AB
Igbt - Transistor IGBT, 600V, 31A, 139W, TO220AB
Τελική: 5.01 €
     
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Igbt - Transistor  IGBT, GenX4™, 650V, 110A, 880W, TO264
Igbt - Transistor IGBT, GenX4™, 650V, 110A, 880W, TO264
Τελική: 29.00 €
     
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Igbt - H-bridge, Urmax 1.2kV, Ic 21A, P 130W, Ifsm 35A, ECO-PAC 2, screw

Κωδικός: 33053

PSHI25/12 PDF

PSHI25/12

Τιμή χωρίς ΦΠΑ:  32.30 €
Αξία ΦΠΑ:  7.75 €
Τελική με ΦΠΑ:  40.05 €
Ποσότητα:   
Προειδοποίηση Μεγάλος χρόνος παράδοσης
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology H-bridge
Off state voltage max. 1.2kV
Collector current 21A
Power 130W
Max. forward impulse current 35A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Διαθεσιμότητα: Με παραγγελία
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Κατασκευαστές--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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