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  Catalog » Semiconductors » IGBT : H-bridge, Urmax 600V, Ic 29A, P 130W, Ifsm 60A, ECO-PAC 2, screw  [Log In
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Igbt - Transistor  IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series  H3
Igbt - Transistor IGBT, bipolar, 600V, 40A, 170W, PG-TO220-3, Series H3
Final price: 4.14 €
     
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Igbt - Transistor  IGBT, 1.2kV, 35A, 230W, TO3PN
Igbt - Transistor IGBT, 1.2kV, 35A, 230W, TO3PN
Final price: 4.84 €
     
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Igbt - H-bridge, Urmax 600V, Ic 29A, P 130W, Ifsm 60A, ECO-PAC 2, screw

Prod code: 33054

PSHI50/06 PDF

PSHI50/06

Price:  48.66 €
VAT:  11.68 €
Final price with tax:  60.33 €
Amount:   
Warning Long delivery time
Specifications
Manufacturer POWERSEM
Type of module IGBT
Semiconductor structure transistor/transistor
Topology H-bridge
Off state voltage max. 600V
Collector current 29A
Power 130W
Max. forward impulse current 60A
Case ECO-PAC 2
Application H-bridge
Electrical mounting soldered
Mounting screw
Operating temperature 40...150°C
Gate - emitter voltage ±20V
 
Availability: With order
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Manufacturers--- | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | ON SEMICONDUCTOR | SEMIKRON | ST MICROELECTRONICS | TOSHIBA
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