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  Κατάλογος » Hμιαγωγοί » Transistor / Fet » FET : Transistor power P-MOSFET 55V 3,4A 2W Rds=0.105 SO8  [Είσοδος
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 500V, 7.2A, 30W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 500V, 7.2A, 30W, TO220FP
Τελική: 1.47 €
     
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Transistor N-FET - Transistor  N-MOSFET, unipolar, 600V, 20A, 192W, TO220FP
Transistor N-FET - Transistor N-MOSFET, unipolar, 600V, 20A, 192W, TO220FP
Τελική: 4.94 €
     
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FET - Transistor power P-MOSFET 55V 3,4A 2W Rds=0.105 SO8

Κωδικός: 2855

IRF7342PBF PDF

IRF7342PBF

Specifications
Manufacturer INTERNATIONAL RECTIFIER
Transistor type P-MOSFET x2
Polarisation unipolar
Transistor kind HEXFET
Drain-source voltage 55V
Drain current 3.4A
Power 2W
Case SO8
Gate-source voltage 20V
On-state resistance 105mΩ
Junction-to-ambient thermal resistance 62.5K/W
Mounting SMD
Gate charge 26nC
 
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Κατασκευαστές--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TOSHIBA | VISHAY
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