Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
P-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
30V |
Drain current |
5.8A |
Power |
2.5W |
Case |
SO8 |
Gate-source voltage |
20V |
On-state resistance |
45mŮ |
Junction-to-ambient thermal resistance |
50K/W |
Mounting |
SMD |
Gate charge |
39.3nC |
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