Specifications |
Manufacturer |
DIODES INCORPORATED |
Type of transistor |
P-MOSFET x2 |
Polarisation |
unipolar |
Drain-source voltage |
-60V |
Drain current |
-3.9A |
Pulsed drain current |
-32A |
Power dissipation |
1.2W |
Case |
SO8 |
Gate-source voltage |
±20V |
On-state resistance |
55mΩ |
Mounting |
SMD |
Kind of package |
reel, tape |
Kind of channel |
enhanced |
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