Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
P-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
-60V |
Drain current |
-2.6A |
Power dissipation |
2.3W |
Case |
SOT223 |
Gate-source voltage |
±20V |
On-state resistance |
154mΩ |
Mounting |
SMD |
Gate charge |
14.3nC |
Kind of package |
reel,   tape |
Kind of channel |
enhanced |
Gross weight |
0.156 g |
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