Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
P-MOSFET |
Technology |
PowerTrench® |
Polarisation |
unipolar |
Drain-source voltage |
-30V |
Drain current |
-8.8A |
Power dissipation |
2.5W |
Case |
SO8 |
Gate-source voltage |
±20V |
On-state resistance |
35mΩ |
Mounting |
SMD |
Gate charge |
40nC |
Kind of package |
reel,   tape |
Kind of channel |
enhanced |
Gross weight |
0.095 g |
|
|