Specifications |
Manufacturer |
TAIWAN SEMICONDUCTOR |
Type of transistor |
P-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
-30V |
Drain current |
-3A |
Case |
SOT23 |
Gate-source voltage |
±20V |
On-state resistance |
60mΩ |
Mounting |
SMD |
Gate charge |
2.7nC |
Kind of channel |
enhanced |
Gross weight |
0.01 g |
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