Specifications |
Manufacturer |
NEXPERIA |
Transistor type |
P-MOSFET |
Polarisation |
unipolar |
Drain-source voltage |
30V |
Drain current |
230mA |
Power |
420mW |
Case |
TO236AB |
Gate-source voltage |
±8V |
On-state resistance |
4.1Ω |
Mounting |
THT |
Gate charge |
0.72nC |
Quantity in package |
3000pcs. |
Package type |
reel, tape |
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