Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
P-MOSFET |
Technology |
PowerTrench® |
Polarisation |
unipolar |
Drain-source voltage |
-30V |
Drain current |
-13A |
Power dissipation |
2.5W |
Case |
SO8 |
Gate-source voltage |
±25V |
On-state resistance |
14.8mΩ |
Mounting |
SMD |
Gate charge |
96nC |
Kind of package |
reel,   tape |
Kind of channel |
enhanced |
Gross weight |
0.107 g |
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