Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
P-MOSFET |
Technology |
SIPMOS™ |
Polarisation |
unipolar |
Drain-source voltage |
-100V |
Drain current |
-15A |
Power dissipation |
128W |
Case |
PG-TO252-3 |
Gate-source voltage |
±20V |
On-state resistance |
0.2Ω |
Mounting |
SMD |
Kind of channel |
enhanced |
|
|