|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
P-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
55V |
| Drain current |
19A |
| Power |
68W |
| Case |
TO262 |
| Gate-source voltage |
20V |
| On-state resistance |
100mΩ |
| Junction-to-case thermal resistance |
2.2K/W |
| Mounting |
THT |
| Gate charge |
23.3nC |
| |
|
Αισθητήρια
Καθαριστικά - Χημικά
