|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
P-MOSFET |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
20V |
| Drain current |
6.7A |
| Power |
2.5W |
| Case |
SO8 |
| Gate-source voltage |
12V |
| On-state resistance |
40mΩ |
| Junction-to-ambient thermal resistance |
50K/W |
| Mounting |
SMD |
| Gate charge |
32.7nC |
| |
|
Αισθητήρια
Καθαριστικά - Χημικά
