Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
P-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
20V |
Drain current |
620mA |
Power |
540mW |
Case |
SOT23 |
Gate-source voltage |
12V |
On-state resistance |
600mΩ |
Junction-to-ambient thermal resistance |
230K/W |
Mounting |
SMD |
Gate charge |
2.4nC |
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