Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
P-MOSFET |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
100V |
Drain current |
6.5A |
Power |
39W |
Case |
DPAK |
Gate-source voltage |
20V |
On-state resistance |
480mŮ |
Junction-to-case thermal resistance |
3.2K/W |
Mounting |
SMD |
Gate charge |
18nC |
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