Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N/P-MOSFET |
Technology |
PowerTrench® |
Polarisation |
unipolar |
Kind of transistor |
complementary pair |
Drain-source voltage |
60/-60V |
Drain current |
4.5/-3.5A |
Power dissipation |
2W |
Case |
SO8 |
Gate-source voltage |
±20V |
On-state resistance |
55/105mΩ |
Mounting |
SMD |
Gate charge |
21nC |
Kind of package |
reel,   tape |
Kind of channel |
enhanced |
Gross weight |
0.116 g |
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