Specifications |
Manufacturer |
INTERNATIONAL RECTIFIER |
Transistor type |
N/P-MOSFET x2 |
Polarisation |
unipolar |
Transistor kind |
HEXFET |
Drain-source voltage |
30V |
Drain current |
4A |
Power |
1.4W |
Case |
SO8 |
Gate-source voltage |
20V |
On-state resistance |
50mŮ |
Junction-to-ambient thermal resistance |
90K/W |
Mounting |
SMD |
Gate charge |
16.7 (N)/16.7 (P)nC |
|
|