|
Specifications |
| Manufacturer |
INTERNATIONAL RECTIFIER |
| Transistor type |
N/P-MOSFET x2 |
| Polarisation |
unipolar |
| Transistor kind |
HEXFET |
| Drain-source voltage |
30V |
| Drain current |
4A |
| Power |
1.4W |
| Case |
SO8 |
| Gate-source voltage |
20V |
| On-state resistance |
50mΩ |
| Junction-to-ambient thermal resistance |
90K/W |
| Mounting |
SMD |
| Gate charge |
16.7 (N)/16.7 (P)nC |
| |
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Αισθητήρια
Καθαριστικά - Χημικά
