Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Technology |
HiPerFET™,   X3-Class |
Polarisation |
unipolar |
Drain-source voltage |
200V |
Drain current |
90A |
Power dissipation |
390W |
Case |
TO220AB |
Gate-source voltage |
±20V |
On-state resistance |
12.8mΩ |
Mounting |
THT |
Gate charge |
78nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Reverse recovery time |
85ns |
Gross weight |
2.083 g |
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