Specifications |
Manufacturer |
IXYS |
Type of transistor |
N-MOSFET |
Technology |
HiPerFET™, X3-Class |
Polarisation |
unipolar |
Drain-source voltage |
200V |
Drain current |
140A |
Power dissipation |
520W |
Case |
TO3P |
Gate-source voltage |
±20V |
On-state resistance |
9.6mΩ |
Mounting |
THT |
Gate charge |
127nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Reverse recovery time |
90ns |
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