Specifications |
Manufacturer |
INFINEON TECHNOLOGIES |
Type of transistor |
N-MOSFET x2 |
Technology |
HEXFET® |
Polarisation |
unipolar |
Drain-source voltage |
50V |
Drain current |
3A |
Power dissipation |
2W |
Case |
SO8 |
Mounting |
SMD |
Kind of package |
reel |
Kind of channel |
enhanced |
Gross weight |
0.118 g |
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