Specifications |
Manufacturer |
ONSEMI |
Type of transistor |
N-MOSFET x2 |
Technology |
PowerTrench® |
Polarisation |
unipolar |
Drain-source voltage |
30V |
Drain current |
6A |
Power dissipation |
1.6W |
Case |
SO8 |
Gate-source voltage |
±20V |
On-state resistance |
28mΩ |
Mounting |
SMD |
Gate charge |
8.1nC |
Kind of package |
reel, tape |
Kind of channel |
enhanced |
Features of semiconductor devices |
logic level |
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