Specifications |
Manufacturer |
ON SEMICONDUCTOR |
Type of transistor |
N-MOSFET |
Technology |
QFET® |
Polarisation |
unipolar |
Drain-source voltage |
800V |
Drain current |
5.1A |
Power dissipation |
59W |
Case |
TO220FP |
Gate-source voltage |
±30V |
On-state resistance |
1.55Ω |
Mounting |
THT |
Gate charge |
45nC |
Kind of package |
tube |
Kind of channel |
enhanced |
Gross weight |
2.227 g |
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