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  Catalog » Semiconductors » Transistor / Fet » FET : Transistor N-MOSFET, unipolar, 650V, 21.9A, 313W, PG-TO247-3  [Log In
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FET - Transistor N-MOSFET 75V 80A 200W TO220AB
FET - Transistor N-MOSFET 75V 80A 200W TO220AB
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Transistor P-FET - Transistor  P-MOSFET x2, unipolar, -60V, -3.9A, Idm  -32A, 1.2W, SO8
Transistor P-FET - Transistor P-MOSFET x2, unipolar, -60V, -3.9A, Idm -32A, 1.2W, SO8
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Transistor N-MOSFET - Transistor N-MOSFET, unipolar, 650V, 21.9A, 313W, PG-TO247-3

Prod code: 37576

SPW35N60C3 PDF

SPW35N60C3

Price:  13.51 €
VAT:  3.24 €
Final price with tax:  16.75 €
Amount:   
Usually shipped within 2-3 business days.
Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor N-MOSFET
Technology CoolMOS™
Polarisation unipolar
Drain-source voltage 650V
Drain current 21.9A
Power dissipation 313W
Case PG-TO247-3
Gate-source voltage ±20V
On-state resistance 0.1Ω
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 6.2 g
 
Availability: With order
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Manufacturers--- | ADVANCED POWER ELECTRONICS | DIODES INCORPORATED | DIOTEC SEMICONDUCTOR | FAIRCHILD SEMICONDUCTOR | INFINEON TECHNOLOGIES | INTERNATIONAL RECTIFIER | IXYS | MICROCHIP TECHNOLOGY | NXP | ON SEMICONDUCTOR | RENESAS | ST MICROELECTRONICS | TAIWAN SEMICONDUCTOR | TEXAS INSTRUMENTS | TOSHIBA | VISHAY
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